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BGM1013
MMIC wideband amplifier
Rev. 03 -- 9 December 2004 Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling.
MSC895
1.2 Features
s s s s s s s s Internally matched to 50 Good output match to 75 Very high gain; 35.5 dB at 1 GHz Upper corner frequency at 2.1 GHz 31 dB flat gain up to 2.2 GHz application 14 dBm saturated output power at 1 GHz High linearity (23 dBm IP3out and 43 dBc IM2) 40 dB isolation.
1.3 Applications
s Low Noise Block (LNB) Intermediate Frequency (IF) amplifiers s Cable systems s General purpose.
1.4 Quick reference data
Table 1: Symbol VS IS |s21|2 NF PL(sat) Quick reference data Parameter DC supply voltage DC supply current insertion power gain noise figure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz Conditions RF input; AC coupled Min 23 34.5 13.0 Typ 5 27.5 35.5 4.6 14.0 Max 6 33 36.2 4.7 Unit V mA dB dB dBm
Philips Semiconductors
BGM1013
MMIC wideband amplifier
2. Pinning information
Table 2: Pin 1 2, 5 3 4 6 Pinning Description VS GND2 RF_OUT GND1 RF_IN
1 2 3
SOT363
Simplified outline
6 5 4
Symbol
1
6 4 2, 5
sym062
3
3. Ordering information
Table 3: Ordering information Package Name BGM1013 SC-88 Description plastic surface mounted package; 6 leads Version SOT363 Type number
4. Marking
Table 4: BGM1013 Marking codes Marking code C4Type number
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VS IS Ptot Tstg Tj PD Parameter DC supply voltage DC supply current total power dissipation storage temperature junction temperature maximum drive power Tsp 90 C Conditions RF input; AC coupled Min -65 Max 6 35 200 +150 150 -10 Unit V mA mW C C dBm
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Product data sheet
Rev. 03 -- 9 December 2004
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Philips Semiconductors
BGM1013
MMIC wideband amplifier
6. Recommended operating conditions
Table 6: Symbol VS Tamb Operating conditions Parameter supply voltage ambient temperature Conditions Min 4.5 -40 Typ 5.0 25 Max 5.5 85 Unit V C
7. Thermal characteristics
Table 7: Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Ptot = 200 mW; Tsp 90 C Typ 300 Unit K/W
8. Characteristics
Table 8: Characteristics VS = 5 V; IS = 27.5 mA; Tj = 25 C; measured on demo board; unless otherwise specified. Symbol Parameter VS IS |s21|2 DC supply voltage DC supply current insertion power gain f = 100 MHz f = 1 GHz f = 1.8 GHz f = 2.2 GHz f = 2.6 GHz f = 3 GHz |s11|2 |s22|2 input return loss output return loss f = 1 GHz f = 2.2 GHz ZL = 50 f = 1 GHz f = 2.2 GHz ZL = 75 f = 1 GHz f = 2.2 GHz |s12|2 NF B K PL(sat) isolation noise figure bandwidth stability factor saturated load power f = 1 GHz f = 2.2 GHz f = 1 GHz f = 2.2 GHz 3 dB below flat gain at f = 1 GHz f = 1 GHz f = 2.2 GHz f = 1 GHz f = 2.2 GHz 15 12 40 34 1.2 0.9 13.0 9.0 17 15 42 36 4.6 4.9 2.1 1.3 1.0 14.0 10.2 4.7 5.1 dBm dBm dB dB dB dB dB dB GHz 18 13 20 16 dB dB Conditions RF input; AC coupled Min 23 34.5 34.5 33.0 30.5 25.2 24.0 10.1 9.3 Typ 5 27.5 35.2 35.5 34.0 31.8 29.7 26.1 10.6 10.2 Max 6 33 35.9 36.2 35.2 33.1 31.2 27.9 Unit V mA dB dB dB dB dB dB dB dB
9397 750 14413
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 -- 9 December 2004
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Philips Semiconductors
BGM1013
MMIC wideband amplifier
Table 8: Characteristics ...continued VS = 5 V; IS = 27.5 mA; Tj = 25 C; measured on demo board; unless otherwise specified. Symbol Parameter PL(1dB) IP3in IP3out IM2 load power at 1 dB gain compression input third order intercept point Conditions f = 1 GHz f = 2.2 GHz f = 1 GHz f = 2.2 GHz output third order intercept point f = 1 GHz f = 2.2 GHz second order intermodulation product f0 = 1 GHz; PD = -45 dBm (PL = -10 dBm) f0 = 1 GHz; PD = -40 dBm (PL = -5 dBm) Min 12.0 7.0 -14 -15 21 17 Typ 13.0 8.1 -12.8 -13.2 22.7 18.6 45 43 Max 43 41 Unit dBm dBm dBm dBm dBm dBm dBc dBc
9. Application information
Figure 1 shows a typical application circuit for the BGM1013 MMIC. The device is internally matched to 50 and therefore does not need any external matching. Output impedance is also very good to 75 load. The value of the input and output DC blocking capacitors C1 and C2 should be not more than 100 pF for applications above 100 MHz. Their values can be used to fine-tune the input and output impedance. For the RF-choke, optimal results are obtained with a good quality chip inductor like the TDK MLG1608 (0603) or a wire-wound SMD. The value of the inductor can be used to fine-tune the output impedance. The RF choke and supply decoupling components should be located as close as possible to the MMIC. Ground paths must be as short as possible. The printed-circuit board (PCB) top ground plane must be as close as possible to the MMIC, and ideally directly beneath it. When using vias, use at least 3 vias for the top ground plane in order to limit ground path inductance. Supply decoupling with C3 should be from pin 1 to the same top ground plane.
VS 1 IN 6
C1 L1 C3 C2
VS
RF in
3 OUT
RF out
R1(1)
BGM1013
SOT363 4 2, 5
GND1
GND2
001aab389
(1) R1 is omitted in typical application.
Fig 1. Typical application circuit
9397 750 14413
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 -- 9 December 2004
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Philips Semiconductors
BGM1013
MMIC wideband amplifier
Figure 2 shows the PCB layout used for the typical application.
30 mm
PH
30 mm IN OUT
V+
PH
IC1 C1 C2 L1 C3
IN
OUT
V+
001aab395
Material = FR4; thickness = 0.6 mm; r = 4.6.
Fig 2. Printed-circuit board layout and component view for typical application Table 9: C1, C2 C3 R1 L1 List of components used for the typical application Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor SMD resistor SMD inductor Value 100 pF 22 nF 100 nH Dimensions 0603 0603 0603 0603
Component
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(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 -- 9 December 2004
5 of 14
Philips Semiconductors
BGM1013
MMIC wideband amplifier
9.1 Flat gain application: 31 dB between 800 MHz and 2.2 GHz
By changing the components at the output of the amplifier, a flatter gain can be obtained. The gain is 31 dB 1 dB between 800 MHz and 2.2 GHz. PL(1dB) is 10 dBm at 1 GHz and 5.7 dBm at 2.2 GHz.
30 mm
PH
30 mm IN OUT
V+
PH
IC1 C1 C2 R1 L1 C3
IN
OUT
V+
001aab397
Fig 3. Printed-circuit board layout and component view for 31 dB flat gain application Table 10: C1 C2 C3 R1 L1
[1]
List of components used for the 31 dB flat gain application [1] Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor SMD resistor SMD inductor Value 100 pF 4.7 nF 22 nF 27 5.6 nH Dimensions 0603 0603 0603 0603 0603
Component
Pin 2 should not be connected in order to obtain optimal input matching.
9397 750 14413
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 -- 9 December 2004
6 of 14
Philips Semiconductors
BGM1013
MMIC wideband amplifier
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 +0.2 100 MHz 2 0.4 0.2 180 0 0.2 0.5 1 3 GHz -0.2 -5 5 10 0 0
+5
-135
-0.5 -1 -90
-2
-45 1.0
001aab399
IS = 27.5 mA; VS = 5 V; PD = -35 dBm; Zo = 50 .
Fig 4. Input reflection coefficient (s11); typical values
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 +0.2 0.4 0.2 180 0 0.2 0.5 3 GHz 1 2 5 10 0 0
100 MHz
+5
-0.2
-5
-135
-0.5 -1 -90
-2
-45 1.0
001aab401
IS = 27.5 mA; VS = 5 V; PD = -35 dBm; Zo = 50 .
Fig 5. Output reflection coefficient (s22); typical values
9397 750 14413
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 -- 9 December 2004
7 of 14
Philips Semiconductors
BGM1013
MMIC wideband amplifier
0 |s12| 2 (dB) -10
001aab402
40 |s21| 2 (dB) 35
001aab404
(1)
-20 30 -30
(2)
(3)
-40
25
-50 0 1000 2000 f (MHz) 3000
20 0 1000 2000 f (MHz) 3000
IS = 27.5 mA; VS = 5 V; PD = -35 dBm; Zo = 50 .
PD = -35 dBm; Zo = 50 . (1) IS = 32.6 mA; VS = 5.5 V. (2) IS = 27.5 mA; VS = 5 V. (3) IS = 21.5 mA; VS = 4.5 V.
Fig 6. Isolation (|s12 typical values
|2)
as a function of frequency;
Fig 7. Insertion gain (|s21|2) as a function of frequency; typical values
15 PL (dBm) 10
(3) (1)
20 PL (dBm) 10
001aab406
001aab408
(1)
(2)
(2)
(3)
5
0 0 -5
-10 -45
-35
-25 PD (dBm)
-15
-10 -40
-30
-20 PD (dBm)
-10
f = 1 GHz; Zo = 50 . (1) VS = 5.5 V. (2) VS = 5 V. (3) VS = 4.5 V.
f = 2.2 GHz; Zo = 50 . (1) VS = 5.5 V. (2) VS = 5 V. (3) VS = 4.5 V.
Fig 8. Load power as a function of drive power at 1 GHz; typical values
Fig 9. Load power as a function of drive power at 2.2 GHz; typical values
9397 750 14413
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 -- 9 December 2004
8 of 14
Philips Semiconductors
BGM1013
MMIC wideband amplifier
6 NF (dB) 5.5
001aab410
5 K 4
001aab411
3 5
(1) (2)
2
4.5
(3)
1
4 0 500 1000 1500 2000 2500 f (MHz)
0 0 1000 2000 3000 f (MHz) 4000
Zo = 50 . (1) VS = 5.5 V. (2) VS = 5 V. (3) VS = 4.5 V.
IS = 27.5 mA; VS = 5 V; Zo = 50 .
Fig 10. Noise figure as a function of frequency; typical values
Fig 11. Stability factor as a function of frequency; typical values
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(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 -- 9 December 2004
9 of 14
Philips Semiconductors
BGM1013
MMIC wideband amplifier
Table 11: Scattering parameters VS = 5 V; IS = 27.5 mA; PD = -35 dBm; Zo = 50 ; Tamb = 25 C; measured on demo board. f (MHz) s11 Magnitude (ratio) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0.259 0.258 0.270 0.271 0.281 0.296 0.317 0.335 0.334 0.331 0.326 0.309 0.287 0.257 0.224 0.198 Angle (deg) 19.3 3.2 -25.6 -43.7 -61.5 -80.1 -102.3 -127.7 -158.1 169.6 130.6 95.9 59.0 20.4 -15.5 -50.7 s21 Magnitude (ratio) 57.79 57.96 60.08 60.60 60.74 60.44 59.21 57.01 54.46 50.31 44.63 38.92 33.31 28.20 23.60 20.24 Angle (deg) 2.5 -10.9 -41.2 -67.0 -95.6 -121.2 -147.1 -172.9 160.8 134.1 104.7 79.4 55.5 33.1 13.1 -4.8 s12 Magnitude (ratio) 0.01642 0.01096 0.00712 0.00751 0.00687 0.00759 0.00828 0.00981 0.01130 0.01272 0.01571 0.01826 0.01994 0.01952 0.02037 0.02198 Angle (deg) 47.3 20.7 -12.6 -13.9 -12.1 -7.3 -11.5 -16.8 -25.1 -34.0 -43.0 -57.0 -69.2 -78.3 -89.9 -99.8 s22 Magnitude (ratio) 0.325 0.248 0.163 0.134 0.104 0.092 0.097 0.123 0.142 0.157 0.172 0.172 0.161 0.147 0.139 0.127 Angle (deg) 118.6 110.9 87.0 63.2 43.7 37.7 33.9 25.6 6.0 -14.2 -39.8 -61.9 -83.5 -104.4 -125.1 -151.5 0.9 1.0 1.3 1.2 1.3 1.2 1.2 1.1 1.0 1.0 0.9 0.9 1.0 1.1 1.2 1.3 K-factor
9397 750 14413
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 -- 9 December 2004
10 of 14
Philips Semiconductors
BGM1013
MMIC wideband amplifier
10. Package outline
Plastic surface mounted package; 6 leads SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC JEITA SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 04-11-08
Fig 12. Package outline SOT363 (SC-88)
9397 750 14413 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 -- 9 December 2004
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Philips Semiconductors
BGM1013
MMIC wideband amplifier
11. Revision history
Table 12: Revision history Release date 20041209 Data sheet status Product data sheet Product data sheet Product data sheet Change notice Doc. number 9397 750 14413 9397 750 14229 9397 750 13469 Supersedes BGM1013_2 BGM1013_1 Document ID BGM1013_3 Modifications: BGM1013_2 BGM1013_1
*
Section 6 added.
20041130 20040831
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(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 -- 9 December 2004
12 of 14
Philips Semiconductors
BGM1013
MMIC wideband amplifier
12. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
14. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14413
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 -- 9 December 2004
13 of 14
Philips Semiconductors
BGM1013
MMIC wideband amplifier
16. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Recommended operating conditions. . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Flat gain application: 31 dB between 800 MHz and 2.2 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13
(c) Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 9 December 2004 Document number: 9397 750 14413
Published in The Netherlands

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